Heteroepitaxy of Semiconductors:Theory, Growth, and Characterization, Second Edition

半导体异质外延:理论,生长和特性,第二版

物理学史

售   价:
1096.00
发货周期:预计5-7周发货
出  版 社
出版时间
2020年09月30日
装      帧
平装
ISBN
9780367655808
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页      码
660
开      本
254 x 178 mm (7 x 10)
语      种
英文
版      次
2nd ed.
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图书简介
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
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