Emerging Non-Volatile Memories

材料科学基础学科

原   价:
2715.00
售   价:
2172.00
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平台大促 低至8折优惠
发货周期:外国库房发货,通常付款后3-5周到货
出  版 社
出版时间
2016年09月22日
装      帧
平装
ISBN
9781489979308
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页      码
273
语      种
英文
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库存 19 本
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图书简介
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers’ understanding of future trends in non-volatile memories.
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