Introduction to Magnetic Random-Access Memory

磁随机-存取存储器简介

物理学史

售   价:
1122.00
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2016年12月02日
装      帧
精装
ISBN
9781119009740
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页      码
264
开      本
155.6x235mm
语      种
英文
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图书简介
This book presents the basic phenomena involved in MRAM, the materials and film stacks that are being used, the basic principles of the various types of MRAM (toggle, STT, magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and the recent developments towards logic-in-memory architectures. The purpose is to help microelectronics engineers get into the field and better understand the papers they read and the talks they hear on this topic. This book will be focused on MRAM applications, which is pedagogical in the sense that an engineer or scientist, who has never studied magnetism, could understand the content of the book.
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