High-k Gate Dielectric Materials:Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

高k栅介质材料:高级金属氧化物半导体场效应晶体管(MOSFET)的应用

电子技术

售   价:
1358.00
发货周期:预计5-7周发货
出  版 社
出版时间
2020年12月18日
装      帧
精装
ISBN
9781771888431
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页      码
246
开      本
6 x 9
语      种
英文
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图书简介
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and; applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
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