图书简介
Symposium M, ’Materials and Technology for Nonvolatile Memories’, was held November 30–December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. This volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies.
Part I. Advanced Flash Memories: 1. Mixed-ionic-electronic-conduction (MIEC)-based access devices for 3D multilayer crosspoint memory; 2. MANOS erase performance dependence on nitrogen annealing conditions; Part II. Resistive Switching Memories (ReRAM): 3. Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications; 4. Influence of graphene interlayers on electrode-electrolyte interfaces in resistive random accesses memory cells; 5. Nanosecond fast switching processes observed in gapless-type, Ta2O5–based atomic switches; 6. XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics; 7. Effect of morphological change on unipolar and bipolar switching characteristics in Pr0.7Ca0.3MnO3 based RRAM; 8. Experimental and theoretical investigation of minimization of forming-induced variability in resistive memory devices; 9. Material and device parameters influencing multi-level resistive switching of room temperature grown titanium oxide layers; 10. A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering; Part III. Magnetoresistive Random Access Memories (MRAM): 11. Perpendicular magnetic anisotropy on W-based spin-orbit torque CoFeB | MgO MRAM stacks; 12. Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit; Part IV. Ferroelectric Random Access Memories (FeRAM): 13. Giant self-polarization in FeRAM element based on sol-gel PZT films; 14. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties; 15. Chemical fluid deposition of Hf-Zr-O-based thin films using supercritical carbon dioxide fluid; 16. Ferroelectricity in strategically synthesized Pb-free LiNbO3-type ZnSnO3 nanostructure arrayed thick films; 17. Measurements of polarization switching in LiNbO3-type ZnSnO3/ZnO nanocomposite thin films; Part V. Polymer Memories and Emerging Materials: 18. Photo-controllable resistive memory based on polymer materials; 19. Determining the efficiency of fast ultrahigh-density writing of low-conductivity patterns on semiconducting polymers; 20. Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition; 21. Chemo-ionic-conformational memory from reactive dense gels: a way to explore new multivalent memories and brain memory.
Trade Policy 买家须知
- 关于产品:
- ● 正版保障:本网站隶属于中国国际图书贸易集团公司,确保所有图书都是100%正版。
- ● 环保纸张:进口图书大多使用的都是环保轻型张,颜色偏黄,重量比较轻。
- ● 毛边版:即书翻页的地方,故意做成了参差不齐的样子,一般为精装版,更具收藏价值。
关于退换货:
- 由于预订产品的特殊性,采购订单正式发订后,买方不得无故取消全部或部分产品的订购。
- 由于进口图书的特殊性,发生以下情况的,请直接拒收货物,由快递返回:
- ● 外包装破损/发错货/少发货/图书外观破损/图书配件不全(例如:光盘等)
并请在工作日通过电话400-008-1110联系我们。
- 签收后,如发生以下情况,请在签收后的5个工作日内联系客服办理退换货:
- ● 缺页/错页/错印/脱线
关于发货时间:
- 一般情况下:
- ●【现货】 下单后48小时内由北京(库房)发出快递。
- ●【预订】【预售】下单后国外发货,到货时间预计5-8周左右,店铺默认中通快递,如需顺丰快递邮费到付。
- ● 需要开具发票的客户,发货时间可能在上述基础上再延后1-2个工作日(紧急发票需求,请联系010-68433105/3213);
- ● 如遇其他特殊原因,对发货时间有影响的,我们会第一时间在网站公告,敬请留意。
关于到货时间:
- 由于进口图书入境入库后,都是委托第三方快递发货,所以我们只能保证在规定时间内发出,但无法为您保证确切的到货时间。
- ● 主要城市一般2-4天
- ● 偏远地区一般4-7天
关于接听咨询电话的时间:
- 010-68433105/3213正常接听咨询电话的时间为:周一至周五上午8:30~下午5:00,周六、日及法定节假日休息,将无法接听来电,敬请谅解。
- 其它时间您也可以通过邮件联系我们:customer@readgo.cn,工作日会优先处理。
关于快递:
- ● 已付款订单:主要由中通、宅急送负责派送,订单进度查询请拨打010-68433105/3213。
本书暂无推荐
本书暂无推荐