Light-Induced Defects in Semiconductors

电磁学

售   价:
1260.00
发货周期:预计5-7周发货
出  版 社
出版时间
2014年09月13日
装      帧
ISBN
9789814411486
复制
页      码
212
开      本
6x9
语      种
英文
综合评分
暂无评分
我 要 买
- +
库存 50 本
  • 图书详情
  • 目次
  • 买家须知
  • 书评(0)
  • 权威书评(0)
图书简介
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
本书暂无推荐
本书暂无推荐
看了又看
  • 上一个
  • 下一个