Silicon Non-Volatile Memories:Paths of Innovation

硅非易失性存储器:创新之路

计算机科学技术基础学科

原   价:
2196.25
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1757.00
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平台大促 低至8折优惠
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2009年08月25日
装      帧
精装
ISBN
9781848211056
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页      码
256
语      种
英文
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图书简介
This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. "Disruptive paths" are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed
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