New Functional Materials and Emerging Device Architectures for Nonvolatile Memories

New Functional Materials and Emerging Device Architectures for Nonvolatile Memories（MRS Proceedings）

非易失性存储器新型功能材料与器件结构
材料表面与界面

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￥ 796.00

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优惠

平台大促低至8折优惠

发货周期：预计5-7周发货

作者

D. Wouters

出版社

Cambridge University Press

出版时间

2012年09月02日

装帧

精装

ＩＳＢＮ

9781605113142

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页码

174

开本

语种

英文

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Symposium Q, ’New Functional Materials and Emerging Device Architectures for Nonvolatile Memories’, held April 25−29 at the 2011 MRS Spring Meeting in San Francisco, California, was a follow up of a previous series of related symposia on nonvolatile memories at MRS annual meetings. The high attendance and large number of papers submitted indicate continuing strong international interest and research efforts in the field of emerging new nonvolatile memory materials. Main areas of research featured in this symposium were advanced flash memories, phase change memories and resistive switching memories. In addition, ferroelectric memories, organic memories and new emerging memories remained of interest. With international contributions from universities, research centers and industry, this volume reflects the recent advances in material science and their influence on the memory technologies addressed in this symposium.

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Part I. Advanced Flash and Nano-Floating Gate Memories: 1. Scaling challenges for NAND and replacement memory technology Kirk Prall; 2. Growth and in-line characterization of silicon nanodots integrated in discrete charge trapping non-volatile memories Julien Amouroux; 3. Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films Arif Alagoz; 4. Temperature effects on charge transfer mechanisms of nc-ITO embedded ZrHfO high-k nonvolatile memory devices Yue Kuo; 5. Enhancement of nonvolatile floating gate memory devices containing AgInSbTe-SiO2 nanocomposite by inserting HfO2/SiO2 blocking oxide layer Tsung-Eong Hsieh; Part II. Resistive Switching Memories: 6. Complementary resistive switches (CRS): high speed performance for the application in passive nanocrossbar arrays Roland Rosezin; 7. Influence of copper on the switching properties of hafnium oxide-based resistive memory Benjamin Briggs; 8. Fabrication and characterization of copper oxide resistive memory devices Seann Bishop; 9. Influence of process parameters on resistive switching in MOCVD NiO films Dirk Wouters; 10. Understanding the role of process parameters on the characteristics of transition metal oxide RRAM/memristor devices Rashmi Jha; 11. Memristive switches with two switching polarities in a forming free device structure Rainer Bruchhaus; 12. WOx resistive memory elements for scaled flash memories Judit G. Lisoni; 13. Memory retention characteristics of data storage area written in transition metal oxide films by using atomic force microscope Kentaro Kinoshita; 14. A survey of metal oxides and top electrodes for resistive memory devices Seann Bishop; 15. Switching speed in resistive random access memories (RRAMs) based on plastic semiconductor Paulo Rocha; 16. Retentivity of RRAM devices based on metal/YBCO interfaces Carlos Acha; 17. Electro-forming of vacancy-doped metal-SrTiO3-metal structures Barbara Abendroth; Part III. Phase Change, Ferroelectric, and Organic Memories: 18. Interface characterization of metals and metal-nitrides to phase change materials Deepu Roy; 19. Investigation on phase change behaviors of Si-Sb-Te alloy: the effect of tellurium segregation Xilin Zhou; 20. Recent progress in downsizing FeFETs for Fe-NAND application Shigeki Sakai; 21. Lanthanum oxide capping layer for solution-processed ferroelectric-gate thin-film transistors Tue Phan; 22. New MEH-PPV based composite materials for rewritable nonvolatile polymer memory devices Mikhail Dronov; 23. Planar non-volatile memory based on metal nanoparticles Asal Kiazadeh.

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