Silicon-Germanium Carbon Alloys:Growth, Properties and Applications(Optoelectronic Properties of Semiconductors & Superlattices)

硅锗碳合金:增长、特性与应用

电子技术

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2805.00
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2244.00
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平台大促 低至8折优惠
发货周期:预计5-7周发货
作      者
出  版 社
出版时间
2002年07月26日
装      帧
精装
ISBN
9781560329633
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页      码
560
开      本
6x9
语      种
英文
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图书简介
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
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