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Part I. Synthesis: 1. Synthesis and characterization of copper oxide compounds; 2. Characterization of tin oxide grown by molecular beam epitaxy; 3. Epitaxial growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition; 4. Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method; Part II. Optical and Electrical Characterization: 5. Native point defects in multicomponent transparent conducting oxides; 6. Electronic transport characterization of BiVO4 using AC Field Hall Technique; 7. A DLTS study of a ZnO microwire, a thin film and bulk material; 8. Evaluation of sub-gap states in amorphous In-Ga-Zn-O thin films treated with various process conditions; 9. Effects of N2O addition on the properties of ZnO thin films grown using high-temperature H2O generated by catalytic reaction; 10. Density functional study of benzoic acid derivatives modified SnO2 (110) surface; 11. Defect driven emission from ZnO nano rods synthesized by fast microwave irradiation method for optoelectronic applications; 12. Breaking of raman selection rules in Cu2O by intrinsic point defects; 13. Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recording; Part III. Device Issues: 14. High performance IGZO TFTs with modified etch stop structure on glass substrates; 15. Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature; 16. Solution processed resistive random access memory devices for transparent solid-state circuit systems; 17. Structural and electrical characteristics of ternary oxide SmGdO3 for logic and memory devices; 18. Correlation of resistance switching behaviors with dielectric functions of manganite films: a study by spectroscopic ellipsometry; 19. A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays; 20. Metal-semiconductor-insulator-metal structure field-effect transistors based on zinc oxides and doped ferroelectric thin films; 21. Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane.

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