Materials Fundamentals of Molecular Beam Epitaxy

工程热物理

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605.00
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作      者
出  版 社
出版时间
1992年10月01日
装      帧
平装
ISBN
9780127016252
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页      码
301
开      本
语      种
英文
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图书简介
The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.
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