Handbook of Silicon Carbide Materials and Devices

图书简介

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Part: I General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 Wolfgang J. Choyke 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques Yuji Matsumoto 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) Devki N. Talwar 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Min Lu and Chengling Lu Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers -- Basic Principles and Techniques Chin-Che Tin, Rongxiang Hu, Roman Drachev, Alireza Yaghoubi 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system Yingxi Niu 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties Hao-Hsiung Lin, Bin Xin, Zhe Chuan Feng, Ian T. Ferguson 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Yasuto Hijikata, Yu-ichiro Matsushita, Takeshi Ohshima Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals Ian T. Ferguson, Zhi Ren Qiu, Lingyu Wan, Jeffrey Yiin, Benjamin Klein, Zhe Chuan Feng 10. Near-Infrared Luminescent Centers in Silicon Carbide Ivan G. Ivanov and Nguyen Tien Son 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry Changcai Cui and Huihui Li 12. Raman Microscopy and Imag

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Handbook of Silicon Carbide Materials and Devices（Series in Materials Science and Engineering） 碳化硅材料与器件手册 电子技术

Handbook of Silicon Carbide Materials and Devices（Series in Materials Science and Engineering）

碳化硅材料与器件手册
电子技术