RECENT PROGRESS IN SILICON-BASED SPINTRONIC MATERIALS(SERIES ON SPINTRONICS)

硅基自旋电子材料进展

凝聚态物理学

原   价:
736.00
售   价:
552.00
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2014年12月18日
装      帧
精装
ISBN
9789814635998
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页      码
164
语      种
英文
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图书简介
This book covers the crucial aspects of theoretical and experimental approaches for Si-based spintronic materials. The theory parts emphasize on two first-principles methods — the GW method to improve the insulating gaps of the half metals which are a class of materials ideal for spintronic applications, and the linear response theory to calculate electric and magnetic susceptibilities. Three growth methods for doping transition metal elements in alloy and layered forms in Si will be focused on. Also three methods for characterization will be presented emphasizing on how to interpret experimental results. Finally, recent progress made in the Si-based spintronic materials will be discussed. This book is intended for researchers and graduate students who are interested in designing and growing new spintronic materials, in particular, silicon-based. Key Features: ○ The authors explain experimental and theoretical results in terms of physical pictures and hope to promote in depth understanding and to inspire new way of thinking ○ Graduate students will appreciate experimental results better as the authors show how to interpret the results relevant to what physically happens in the measured systems ○ We try to avoid the use of jargon to describle the physical pictures
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Harvard Library
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