FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES:SELECTED PAPERS FROM THE RUSSIA-JAPAN-USA-EUROPE SYMPOSIUM (RJUSE TERATECH-2016)

FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES:SELECTED PAPERS FROM THE RUSSIA-JAPAN-USA-EUROPE SYMPOSIUM (RJUSE TERATECH-2016)（SELECTED TOPICS IN ELECTRONICS AND SYSTEMS）

太赫兹设备与技术的基本原理及应用问题：俄罗斯—日本—美国—欧洲研讨会选集(RJUSE TERATECH-2016)
电子技术

原价：

￥ 1286.00

售价：

发货周期：预计3-5周发货

作者

RYZHII MAXIM & SATOU AKIRA & OTSUJI TAIICHI

出版社

World Scientific Publishing

出版时间

2017年03月06日

装帧

精装

ＩＳＢＮ

9789813223271

复制

页码

140

语种

英文

综合评分

暂无评分

图书详情
目次
买家须知
书评（0）
权威书评（0）

图书简介

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression. The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 – November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz. This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices. Key Features: o This issue contains selected extended papers presented as invited and contributed talks at the RJUSE-TeraTech 2016 symposium o It addresses the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors (D Coquillat, V Nodjiadjim, S Blin, A Konczykowska, N Dyakonova, C Consejo, P Nouvel, A Pénarier, J Torres, D But, S Ruffenach, F Teppe, M Riet, A Muraviev, A Gutin, M Shur and W Knap); Terahertz Response of Tightly Concatenated Two Dimensional InGaAs Field-Effect Transistors Integrated on a Single Chip (D M Yermolayev, E A Polushkin, A V Koval’chuk, S Yu Shapoval, K V Marem’yanin, V I Gavrilenko, N A Maleev, V M Ustinov, V E Zemlyakov, V I Yegorkin, V A Bespalov, V V Popov and I Khmyrova); Optimization of the Design of Terahertz Detectors Based on Si CMOS and AlGaN/GaN Field-Effect Transistors (Maris Bauer, Sebastian Boppel, Jingshui Zhang, Adam Rämer, Serguei Chevtchenko, Alvydas Lisauskas, Wolfgang Heinrich, Viktor Krozer and Hartmut G Roskos); Design and Fabrication of Terahertz Detectors Based on 180-nm CMOS Process Technology (Kosuke Wakita, Eiichi Sano, Masayuki Ikebe, Stevanus Arnold, Taiichi Otsuji, Yuma Takida and Hiroaki Minamide); Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel (Aleksandr S Petrov, D Svintsov, M Rudenko, V Ryzhii and M S Shur); THz Spectroscopic Imaging of Chemicals Using IS-TPG (Kosuke Murate, Mikiya Kato and Kodo Kawase); Imaging and Gas Spectroscopy for Health Protection in Sub-THz Frequency Range (W Knap, D B But, D Couquillat, N Dyakonova, M Sypek, J Suszek, E Domracheva, M Chernyaeva, V Vaks, K Maremyanin, V Gavrilenko, C Archier, B Moulin, G Cywinski, I Yahniuk and K Szkudlarek); Calculation of Modal Gain for Terahertz Lasers Based on HgCdTe Heterostructures with Quantum Wells (Alexander A Dubinov and Vladimir Ya Aleshkin); Plasmonic Enhancement of Terahertz Devices Efficiency (Vladimir Mitin, Victor Ryzhii, Maxim Ryzhii, Akira Satou, Taiichi Otsuji and Michael S Shur); Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation (J A Delgado Notario, E Javadi, J Calvo-Gallego, E Diez, J E Velázquez, Y M Meziani and K Fobelets); Improved Performance of Ultrahigh-Sensitive Charge-Sensitive Infrared Phototransistors (CSIP) (Sunmi Kim, Susumu Komiyama, Shinpei Matsuda, Mikhail Patrashin and Yusuke Kajihara); Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme (Rustam A Khabibullin, Nikolay V Shchavruk, Aleksandr Yu Pavlov, Alexey N Klochkov, Dmitry S Ponomarev, Igor A Glinskiy, Petr P Maltsev, Alexey E Zhukov, George E Cirlin and Zhores I Alferov); Intensive Terahertz Radiation from InxGa1-xAs due to Photo-Dember Effect (Dmitry S Ponomarev, Rustam A Khabibullin, Aleksandr E Yachmenev, Petr P Maltsev, Igor E Ilyakov, Boris V Shiskin and Rinat A Akhmedzhanov); Numerical Characterization of Dyakonov-Shur Instability in Gated Two-Dimensional Electron Systems (Akira Satou and Koichi Narahara);

Trade Policy 买家须知