CLASSICAL THEORY OF CRYSTAL DISLOCATIONS:FROM IRON TO GALLIUM NITRIDE

经典晶体位错理论:从铁到氮化镓

材料科学基础学科

原   价:
989.41
售   价:
841.00
优惠
平台大促 低至8折优惠
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2017年09月11日
装      帧
精装
ISBN
9789814749169
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页      码
380
语      种
英文
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图书简介
The book consists of two parts: Part 1 is a standard text of dislocation theory. Mathematics is avoided as much as possible. Part 2 describes application of dislocation theory, which includes mechanical properties (including the inverse temperature dependence of strength) and dislocations in functional materials such as Si, GaN and SiC and dislocations in a thin crystal such as an epitaxial layer. This is what has been long anticipated among researchers in industry. The book contains about 330 illustrations (mostly originals by the author) and the pictures obtained by the author by means of in-situ experiment in a transmission electron microscope over the past 50 years. This book includes many exercises, which the author found useful when he was teaching in Department of Materials Science and Engineering of Nagoya University to stimulate their interests in dislocation theory. Key Features: oThe competing title is "Theory of dislocations" by Hirth and Lothe: In this book, while fundamental aspects are fully described, nothing or only little is mentioned about functional materials such as GaN and SiC, nor about dislocations in a thin crystal such as epilayer, which is essential in modern semiconductor technology oMany original pictures oMany exercises, which the author found useful when he was teaching in Department of Materials Science and Engineering of Nagoya University to stimulate their interests in dislocation theory
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