图书简介

Chapter 1 Basic MOSFET Theory; 1-1: Field-Effect Transistors; 1-2: Mosfet Definitions; 1-3: Rudimentary Analysis; 1-4: Current-Voltage Equations; 1-5: Universal Transfer Characteristics; 1-6: Transconductance; 1-7: Inverter Options; Chapter 2 MOS-Capacitor Phenomena; 2-1: Oxide-Silicon Boundary Conditions; 2-2: Approximate Field and Potentials Profiles; 2-3: Accurate Band Diagram; 2-4: Barrier-Height Difference; 2-5: Interfacial Charge; 2-6: Oxide Charge; 2-7: Calculating Threshold Voltage; Chapter 3 MOS-Capacitor Modeling; 3-1: Exact-Analytic Surface Modeling; 3-2: Comparing MOS and Junction Capacitances; 3-3: Small-Signal Equivalent Circuits; 3-4: Ideal Voltage-Dependent Capacitance; 3-5: Real Voltage-Dependent Capacitance; 3-6: Physics of MOS-Capacitance Crossover; 3-7: Analysis of MOS-Capacitance Crossover; Chapter 4 Improved MOSFET Theory; 4-1: Channel-Junction Interactions; 4-2: Ionic Charge Model; 4-3: Body Effect; 4-4: Advanced Long-Channel Models; Chapter 5 SPICE Models; 5-1: Level-2 Parameters; 5-2: Level-2 Model; 5-3: Small-Signal Applications of Model; 5-4: Large-Signal Applications of Model; Chapter 6 MOSFET-BJT Performance Comparisons; 6-1: Simple-Theory Transconductance Comparison; 6-2: Subthreshold Transconductance Theory; 6-3: Calculating Maximum MOSFET gm/out; 6-4: Transconductance versus Input Voltage; 6-5: Physics of Subthreshold Transconductance; Chapter 7 MOSFET Design for Today’s ICs; 7-1: Survey of Recent Models [e.g., BSIM 1-3]; 7-2: Solving Key Problems [e.g., subthreshold, hot-electron, short-channel effects]; 7-3: Additional Circuit-Design Issues [e.g., noise analysis, temperature effects, characteristic matching]; 7-4: Related Devices [e.g., MODFET, JFET]; 7-5: Future Trends in Device Simulation; Appendixes; Tables; References; Topics for Review; Analytic Problems; Computer Problems; Design Problems; Symbol Index; Subject Index

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