FRONTIERS IN ELECTRONICS:ADVANCED MODELING OF NANOSCALE ELECTRON DEVICES(SELECTED TOPICS IN ELECTRONICS AND SYSTEMS)

电子学前沿:纳米级电子元件的高等建模

电子技术

原   价:
927.00
售   价:
695.00
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2014年01月14日
装      帧
精装
ISBN
9789814583183
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页      码
204
语      种
英文
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图书简介
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels. Key Features: • This book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP – Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA) • Nanoscale Electron Devices started with a big bang but over the years there are still many challenges unsolved which prevent it from becoming mainstream. This book reignites the interests on research works on different modeling levels for nanoscale semiconductor devices, in particular different nanoscale MOS structures (Single- and Multi-Gate MOSFETs) • The book is well written, and targeting at graduate students, faculty and researchers working in MOSFETs
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Harvard Library
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