FRONTIERS IN ELECTRONICS:SELECTED PAPERS FROM THE WORKSHOP ON FRONTIERS IN ELECTRONICS 2011 (WOFE-11)

FRONTIERS IN ELECTRONICS:SELECTED PAPERS FROM THE WORKSHOP ON FRONTIERS IN ELECTRONICS 2011 (WOFE-11)（SELECTED TOPICS IN ELECTRONICS AND SYSTEMS）

电子学前沿：电子学前沿2011（WOFE-11）研讨会论文选集
电子技术

原价：

￥ 1043.00

售价：

发货周期：预计3-5周发货

作者

CRISTOLOVEANU SORIN ET AL

出版社

World Scientific Publishing

出版时间

2013年07月17日

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ＩＳＢＮ

9789814536844

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页码

272

语种

英文

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图书简介

Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics. Key Features: • Workshop in Frontiers of Electronics (WOFE) brought together the leading experts in electronics, reports on their latest research and advancement in microelectronics, this proceeding collected the best papers selected by the organization committee • It provides the vision and road map as where microelectronics is headings • This book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP — Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)

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Lévy Flight of Holes in InP Semiconductor Scintillator (S Luryi and A Subashiev); InAs1-xSbx Alloys with Native Lattice Parameters Grown on Compositionally Graded Buffers: Structural and Optical Properties (D Wang, D Donetsky, Y Lin, G Kipshidze, L Shterengas, G Belenky, W L Sarney and S P Svensson); High-Performance Interband Cascade Lasers for λ = 3-4.5 μm (M W W Bewley, C S Kim, M Kim, I Vurgaftman, C L Canedy, J R Lindle, J Abell and J R Meyer); GaN Based 3D Core-Shell LEDs (X Wang, S Li, S Fündling, J Wei, M Erenburg, J Ledig, H H Wehmann, A Waag, W Bergbauer, M Mandl, M Strassburg and U Steegmüller); Progress in SiC Materials/Devices and Their Competition (D K Schroder); Performance and Applications of Deep UV LED (M Shatalov, A Lunev, X Hu, O Bilenko, I Gaska, W Sun, J Yang, A Dobrinsky, Y Bilenko, R Gaska and M Shur); Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission (S Albert, A Bengoechea-Encabo, M A Sanchez-García, F Barbagini, E Calleja, E Luna, A Trampert, U Jahn, P Lefebvre, L L López, S Estradé, J M Rebled, F Peiró, G Nataf, P de Mierry and J Zuñiga-Pérez); Catalyst-Free GaN Nanowires as Nanoscale Light Emitters (K Bertness, N Sanford, J Schlager, A Roshko, T Harvey, P Blanchard, M Brubaker, A Herrero and A Sanders); Recessed-Gate Normally-Off GaN MOSFET Technologies (K-S Im, K-W Kim, D-S Kim, H-S Kang, D-K Kim, S-J Chang, Y-H Bae, S-H Hahm, S Cristoloveanu and J-H Lee); Silicon-on-Insulator MESFETs at the 45nm Node (W Lepkowski, S J Wilk, M R Ghajar, A Parsi and T J Thornton); Advanced Concepts for Floating-Body Memories (F Gámiz, N Rodriguez and S Cristoloveanu); Plasmonic-Based Devices for Optical Communications (D K Mynbaev and V Sukharenko); Spintronic Devices and Circuits for Low-Voltage Logic (D H Morris, D M Bromberg, J-G (Jimmy) Zhu and L Pileggi); Biomolecular Field Effect Sensors (bioFETs): From Qualitative Sensing to Multiplexing, Calibration and Quantitative Detection from Whole Blood (A Vacic and M A Reed); Theoretical Investigation of Intraband, Infrared Absorbance in Inorganic/Organic Nanocomposite Thin Films with Varying Colloidal Quantum Dot Surface Ligand Materials (K R Lantz and A D Stiff-Roberts).

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